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Silicon Epitaxial Wafers
Epitaxy is a layer of single-crystal
silicon deposited onto a single-crystal silicon wafer. The epitaxial
layer can be doped, as it is deposited, to the precise doping concentration
while continuing the substrate's crystalline structure.
Wafer diameter: 2" up to 8"
Epi resistivity: <1
ohm-cm up to 150 ohm-cm
Epi thickness: < 1 um up to 150 um
Structure: N/N+, N-/N/N+, N/P/N+, N/N+/P-, N/P/P+, P/P+, P-/P/P+
etc.
Wafer Type: Blanket Epitaxial Wafer, Patterned
Epitaxial Wafer with Burried Layer. etc.
Applications include,
Digital, Linear, Power, MOS, BiCMOS Devices.
We supply Silicon Epitaxial Wafers.
If you need more information
and want to order Silicon Epitaxail Wafers. Please Complete the
inquiry form and send it to us.
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Address:#303, Hoseo Technology Center, San 29-1, Saechul-Ri, Baebang-Myun,
Asan, Chungnam,336-795 Korea Phone: 82-41-532-6922, 82-41-540-5323. FAX:
82-41-532-6921,E-Mail: jpma@jenesis.co.kr
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